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Mechanical strain provides a knob for controlling the magnetization of the magnetostrictive-free layer of magnetic tunnel junctions (MTJs), with many applications for energy-efficient memory and computing. This requires integrating materials with high magnetostriction coefficient into MTJs, while still preserving the CoFeB-MgO tunnel barrier for high tunnel magnetoresistance (TMR). One way to accomplish this is to replace the CoFeB free layer of the MTJ with an exchange-coupled bilayer of CoFeB and a highly magnetostrictive ferromagnet like Galfenol (FeGa). Here, FeGa, a thermally stable magnetostrictive material, is integrated into CoFeB-based MTJs. We show that engineering a thin layer of CoFeB and FeGa provides a means of controlling the magnetic properties and switching field in FeGa-based MTJs, and that the exchange-coupled FeGa-CoFeB layer can be used as both a free layer and a fixed layer in the MTJ stack with TMR as high as 100%. 

Abstract The state‐of‐the‐art magnetic tunnel junction, a cornerstone of spintronic devices and circuits, uses a magnesium oxide tunnel barrier that provides a uniquely large tunnel magnetoresistance at room temperature. However, the wide bandgap and band alignment of magnesium oxide‐iron systems increases the resistance‐area product and creates variability and breakdown challenges. Here, the authors study using first principles narrower‐bandgap scandium nitride (ScN) transport properties in magnetoresistive junctions in comparison to magnesium oxide. The results show a high magnetoresistance in Fe/ScN/Fe via Δ₁and symmetry filtering with low wave function decay rates, suggesting scandium nitride could be a new barrier material for spintronic devices.